| 摘要 |
PURPOSE:To manufacture the compound semiconductor thin film of good quality in an excellent reproducible manner as well as to enable to manufacture a heterointerfaced compound semiconductor film having a steep compositional change. CONSTITUTION:A GaAs single crystal substrate 109 is provided on a substrate holder 108, hydrogen gas and arsine gas are fed into a reaction furnace 102 from a gas system 110 as carrier gas. The light source 105 of argon ion laser is turned ON under the above-mentioned condition, and an ultrathin oxide film is removed and a clean surface is obtained by projecting a visible laser beam on the substrate surface. Then, the laser beam is cut off, the vapor of organic metal compound such as trimethylgallium and the like is introduced from a gas system 101 as the bubbling gas of hydrogen gas, the switch of argon ion laser is turned ON, the argon ion laser is made to irradiate on the surface of the substrate, and the temperature of the substrate is raised. Also, nitrogen gas is blown on the back side of the substrate at the same time through a pipe plate 111, the rise in temperature of the substrate holder is prevented by heat conduction. |
