| 摘要 |
PURPOSE:To generate a field pulse in an element by integrating a voltage boosting circuit for the field pulse at a part of the circumference of an element chip. CONSTITUTION:The voltage boosting circuit 2-2 is provided to the output of a field pulse generator 1, and this circuit 2-2 consists of an insulating gate type field effect transistor Qc provided with capacity between the gate and source. When an output pulse f1 is applied to a terminal 4-1, a conductive MOSTQt turns on and off and the one-level voltage Vc developed at the source 7 is applied to a terminal 5-1 through capacity CB to raise the voltage by DELTAVF. The capacity CB is made much larger than parasitic capacity CC, and then the gate voltage of a charging MOSTQc rises above the drain voltage, thereby obtaining a high-voltage field. |
