| 摘要 |
PURPOSE:To improve the precision in inspection while facilitating pattern inspection by a method wherein an optical system for patterning projection exposure is provided with a main image former projecting at specified magnifying power as well as a sub-image former projecting larger transfer pattern than that of the former. CONSTITUTION:A dummy wafer DW is fed to a wafer sender 7 to be automatically set on specified position of a substage 4 by a wafer transfer arm 10. Next a pattern on a reticle R is projected on the dummy wafer DW for exposure by a sub-image former 23. At this time, the magnifying power of projection equals that of magnification. A photoresist film is formed on the surface of dummy wafer DW to form a latent image of pattern on the reticle R by the projection exposure. The projection exposed dummy wafer DW is sent to a wafer receiver 8 to be set on a main stage 3 so that the pattern on reticle R may be contractedly projection exposed on a wafer W by a main image former 22 set up at contracted magnifying power. |
