| 摘要 |
PURPOSE:To reduce an area per one bit, and to make the chip size of the whole memory small by forming a gate region for an SMOS memory transistor while being directly adjoined to a gate region for an MOS type FET. CONSTITUTION:A first polysilicon gate layer 4 for an MOS type FET is formed on a field oxide film 2 on a semiconductor substrate 1 through a gate silicon oxide film 3. The gate layer 4 is shaped, an extremely thin silicon oxide film 5 is formed on both sides of the gate layer 4, and a gate nitride film 6 and a second polysilicon gate layer 7 are formed on the film 5 and the gate layer 4. A gate section B region for an SMOS memory transistor is formed directly adjoined to a gate section A region for the MOS type FET, thus reducing an area per one bit, then making the chip size of the whole memory small. |
