| 摘要 |
PURPOSE:To enable the setting of breakdown voltage as designed by a method wherein the oxide film on a semicondcutor region is partly etched, and the oxide film reduced to a desired thickness is made as a capacitor film. CONSTITUTION:After an N<+> region 2 is diffused on an Si substrate 1, the oxide film 4 formed by oxidation. The oxide film is etched to a desired value with buffered hydrofluoric acid after measurement by means of nano speck and the like, and a resist is removed. The remaining oxide film 4-1 serves as the capacitor film, when breakdown depends on this oxide film, and accordingly the setting of breakdown voltage as designed becomes enabled. |
