| 摘要 |
PURPOSE:To eliminate a defective contact between a cathode electrode and the plated surface of a semiconductor wafer, the deterioration of electrodes and the leakage of plating currents by mounting the cathode electrode on the upper surface side as the non-plated surface of the wafer through a plate electrode. CONSTITUTION:Wafer support sections 27 are fitted to the upper opening edge of a main body 21 at three or four positions at regular intervals. A semiconductor wafer 25 is placed on the support sections 27 while a section to be plated is opposed to a reticulate body 23a. A cathode electrode 22 as a negative electrode on plating is mounted on the upper surface side of the semiconductor wafer 25. The cathode electrode 22 consists of a spring material also functioning as a wafer hold-down spring in combination, and a plate electrode 28 made slightly smaller than the size of the semiconductor wafer 25 is formed to the lower section of the spring material. According to such constitution, one part of plating currents does not leak through the cathode electrode, the deterioration of electrodes can be prevented, and the cathode electrode and the wafer are in contact in surfaces by the plate electrode and a defective contact can be eliminated. |
