MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To adjust and decide exposure easily and instantaneously by a method wherein a size checking pattern comprising at least three patterns is formed within a mask to be constituted for exposure and development of photoresist utilizing the mask. CONSTITUTION:The first pattern 2 and the second pattern 3 comprising a size checking pattern extend in parallel with each other from one side to the other side of a mask while the end side 2a of the first pattern 2 is located nearer the other side of mask than the end side 3a of the second pattern 3 by specified distance (alpha). The upper limit of the specifed distance (d) is the value naturally specified in terms of IC design while the lower limit is the value making the difference between the end side 2a of the pattern 2 and the end side 3a of the pattern 3 visible by a microscope. The third pattern 4 is further provided in the mask A extending in parallel with (or almost parallel with) the first and the second patterns from the other side to one side of the mask between the patterns 2 and 3. Moreover the end side 4a of the pattern 4 is located nearer the mask 1 side by alpha/2+2beta (beta represents exposure shift). The exposure time of photoresist may be changed in three ways to perform ultraviolet ray exposure and development utilizing the mask A subject to said location of the three patterns.