| 摘要 |
PURPOSE:To increase the effective area contributed to the capacitance by a method wherein, in the preparation of the titled capacitor, many grooves are formed in the surface layer part of a semiconductor substrate, the surface thereof and all of the side walls and the bottoms of the grooves being covered with a dielectric layer after adhesion of the lower side electrode layer, and the upper side electrode layer being provided over the entire surface while filling the grooves. CONSTITUTION:In the surface layer part 1a of the IC substrate 1 made of Si, GaAs or the like, the many grooves 2 perpendicular to the surface layer part 1a in the surface 2a of the side wall and parallel to the part 1a in the surface 2b of the bottom are formed at fixed intervals. Next, while including the part 2a and all of the surfaces 2a and 2b, the lower side electrode layer 3 is adhered on these surfaces, and this surface is covered with the thin dielectric layer 4 made of SiO2, Si3N4 or the like. Thereafter, the upper side electrode layer 5 is adhered over the entire surface by filling remaining grooves 2 into a capacitor. The effective area constituting the capacitor is thus increased, if the capacitor has the same capacitance, the dimensions thereof are reduced. |
