| 摘要 |
PURPOSE:To enable the energy band width to vary continuously by a method wherein non single crystal semiconductors having different energy band widths are provided by lamination between P type or N type non single crystal semiconductors having energy band widths. CONSTITUTION:A semiconductor 11 containing P type Si of SixC1-x (0<x<1) as the main constituent, semiconductor 12 made of the laminated body of I-type Si having the bond of (SiH2)r, r>1 and TMS Si carbide, and semiconductor 13 containing N type Si of SixC1-x (0<x<1) as the main constituent are laminated on a substrate electrode 21 having a photo transmitting conductive film on a glass substrate. The semiconductor 12 is obtained by lamination of n-semiconductors and m-semiconductors where n=1(14), m=1(15), n=2(16), m=2(17), n=3(18), m=3(19) and n=4(20), and respective thicknesses are 100Angstrom or less. As a result, the energy band width can be made larger than those of the m-semiconductors. |
