发明名称 SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
摘要 PURPOSE:To stabilize the longitudinal modes of laser beams by a method wherein the photo waveguide layer of a first clad layer or a second clad layer is set at an interval that the photo waveguide layer optically interacts with an active layer, and at the same time, the photo waveguide layer generates no laser oscillation by the operating current. CONSTITUTION:A p type AlXGa1-XAs layer (first clad layer) 2 and a nondoped or p type or n type multiplex guantum well type active layer 3 are formed on a p type GaAs substrate 1. A second clad layer 4 consists of an n type AlZ'Ga1-Z' As layer 41, an n type AlZ''Ga1-Z''As layer 42 and an n type AlY'Ga1-Y'As layer 43, and the layer 43 is formed between the layer 41 and the layer 42. The layer 43 is a photo waveguide layer. The layer 43 is set at an interval that the layer 43 optically interacts with the active layer 3, and at the same time, the photo waveguide layer 43 generates no laser oscillation by the operating current.
申请公布号 JPS6064491(A) 申请公布日期 1985.04.13
申请号 JP19830173809 申请日期 1983.09.19
申请人 ROOMU KK 发明人 TANAKA HARUO;MUSHIGAMI MASAHITO
分类号 H01S5/00;H01S5/042;H01S5/20;H01S5/22 主分类号 H01S5/00
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