发明名称 RESIST COMPOSITION AND ITS HARDENING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition which can prevent production of a defect in a substrate even when the resist film is made thinner in forming a fine pattern of a semiconductor substrate or the like and by which high accuracy processing of a substrate is performed. <P>SOLUTION: The resist composition contains a resist, fine particles comprising one of or both of fullerene and a fullerene derivative, and a crosslinking agent. The crosslinking agent preferably comprises a fullerene derivative, or borazine or a borazole derivative. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004279694(A) 申请公布日期 2004.10.07
申请号 JP20030070444 申请日期 2003.03.14
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 ISHII TETSUYOSHI;YAMAGUCHI TORU;SHIGEHARA JUNKO
分类号 G03F7/004;G03F7/039;G03F7/40;H01L21/027 主分类号 G03F7/004
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