| 摘要 |
PURPOSE:To increase the ratio of etching rates to glass and a silicon oxide film by using a HF-HCl-acetic acid-water group etching liquid containing not more than 5wt% HF, not less than 1wt% HCl and not less than 2wt% acetic acid. CONSTITUTION:The surfaces of lead group passivation glass and an SiO2 film are polished, and some parts of the surfaces are coated and protected with wax, etc. and etched. A HF-HCl-acetic acid-water group etching liquid containing not more than 5wt% HF, not less than 1wt% HCl and not less than 2wt% acetic acid is used at that time. Lead group passivation glass is etched at speed faster than the SiO2 film by one figure or more. |
