| 摘要 |
PURPOSE:To obtain a composite type semiconductor device of high switching speed by a method wherein an MOSFET is connected in parallel between the base and collector of a bipolar transistor, and a channel type FET which is different from the above MOSFET and a semiconductor resistor are connected in parallel between the base and the emitter. CONSTITUTION:An N-channel MOSFET3, a bipolar transistor 2 and a semiconductor resistor 4 are provided on one N<-> type Si substrate 1, a P-channel MOSFET6 is formed on another P type Si substrate, and they are connected as prescribed. When bias V0 is added between the collector terminal 10 and +V1 is added to the common gate terminal 7 of elements 3 and 6, the element 3 only is turned to ON state, and the element 2 is brought to a conductive state. When the above switched to -V2, the element 3 is turned OFF, the element 6 is turned ON, the region between the base B and the emitter E of the element 2 is shortcircuited, the excessive carrier on the base B is quickly discharged through the intermediary of the semiconductor resistor 4, the time of carrier storage is reduced, the switching speed of the device is increased, the input resistance is maintained high and the ON resistance is maintained low. |
