| 摘要 |
PURPOSE:To reduce the resistance of a semiconductor device and to integrate the device by forming the same metal silicide layers on the surface of a P type impurity diffused region and an N type impurity diffused region. CONSTITUTION:A high density P type impurity is diffused in a region 12 on the (100) surface of a P type silicon substrate 1, and an N type impurity is diffused in a region 13. High melting point metal silicide layers such as Ti silicide layers 14 are formed on the surfaces of the regions 12, 13. When thus constructed, the layer resistances of the layers 12, 13 can be reduced without deteriorating the characteristics of the diffused regions. |
