| 摘要 |
PURPOSE:To obtain a blazed grating having high quality by forming a layer insoluble in a solvent for photoresist on the surface of an org. high polymer film, forming a relief grating on the photoresist film coated thereon and etching said film with a diagonal-incident ion beam. CONSTITUTION:An electron ray resist film 2 is coated on a substrate as an org. high polymer film and the film 2 is etched with an argon ion beam then a layer 3 insoluble in a solvent for photoresist is formed on the surface thereof. Photoresist 4 having an ion etching rate lower than the film 2 is coated on said insoluble layer 3. A relief grating is then formed on the photoresist film. Such sample is ion-etched with a diagonal-incident argon ion beam by using an ion etching device. The blazed grating of transmission type having high quality is obtd. by such method. |
