| 摘要 |
PURPOSE:To obtain an excellent crystalline thin film on an amorphous subtance, by disposing on a substrate a periodical unevenness having the same rotational symmetry as that of the crystal axis of a crystal face grown preferentially. CONSTITUTION:A film 3 of a metal material (Au or the like) to form a eutectic or compound with a crystal raw material is deposited on a substrate 1 of an amorphous substance (glass or the like) or a metal (stainless steel or the like). Then, a crystal raw material (Si or the like) is deposited thereon to form a molten alloy with the film 3. The excessive Si is made to separate out on the substrate 1 to obtain a crystalline thin film 4. In this case, a periodical unevenness 2 having the same rotational symmetry as that of the crystal axis of a crystal face[e.g., (111) plane]pefferentially grown in parallel to the substrate surface is previously formed on the substrate 1. by the effect of the periodical unevenness 2, the crystalline thin film 4 can be made uniform in orientation, and a polycrystalline thin film 5 is formed in the other regions. |
