| 摘要 |
PURPOSE:To prevent the generation of cracks by the improvement of the step coverage of an insulation film by a method wherein the stepwise difference due to a gate electrode is reformed by means of an Si oxide film provided between the gate electrode and the insulation film. CONSTITUTION:The gate electrode 2 is formed on a substrate 1. Next, a solution-formed coating liquid for Si oxide film is applied by spinning, and then the coated film is made dense and thus stabilized by heat treatment, resulting in the formation of the first insulation film 7. The second insulation film 3 and a semiconductor thin film 4 are formed on the film 7. The film 3 is an Si nitride film by plasma CVD, and the film 4 is an amorphous Si film 5 by plasma CVD. Further, the source and drain electrodes 5 and 6 made of metallic thin films are provided. |
