Method of manufacturing a MOSFET using accelerated ions to form an amorphous region

摘要

A method for manufacturing MOSFET type semiconductor devices comprises forming a gate insulation layer and a gate electrode on a single crystal semiconductor substrate; introducing impurities in the substrate using the gate electrode as a mask; introducing accelerated ions deeper into the substrate than the impurities and overlapping at least a portion of the region in which the impurities are introduced in order to convert that portion to an amorphous state; diffusing the impurities into the amorphous region using a heating atmosphere, in order to form source and drain regions and, at the same time, converting the amorphous region to a single crystal; and forming source and drain electrodes in contact with the source and drain regions.