SEMICONDUCTOR DEVICE USING FET:S

摘要

The invention relates to an integrated MOS circuit comprising a MOS transistor which is connected as a resistor and which, when conducting current, generates a voltage which is supplied to the source/gate of a second field effect device. In order to obtain a suitable current adjustment, the two channel widths are chosen so that due to narrow channel effects, a difference (though small) in threshold voltage is obtained. The invention is of particular interest for CCD input circuits for generating a small offset voltage required for supplying FAT-zero.