| 摘要 |
PURPOSE:To form a P type layer having depth different at positions by implanting Be ions to a semiconductor crystal, to which protons having a range larger than that of Be ions afterward implanted are implanted, and annealing the crystal. CONSTITUTION:A mask 2 is formed to a semi-insulating GaAs single crystal 1, proton flux 3 accelerated at high speed is projected, protons are implanted, and a damage section 4 is formed. A mask 5 is formed, and Be ions 6 are implanted to shape an implantation layer 7. The single crystal 1 is heated in an inert atmosphere or an AsH3 or As atmosphere and annealed. The shape of a P type layer 8 formed by the distribution of Be is deepened in a section 9 to which protons are implanted, and shallowed in a section 10 not implanted. |
