An ion beam machining device.

摘要

An ion beam machining device has a plasma-generating chamber (21), a machining chamber (23), and an ion-extracting grid (22) disposed between the two chambers (21, 23). The grid (22) has an insulator layer (24) facing the plasma-generating chamber (21) and a conductor layer (25) facing the machining chamber (23). A plurality of holes (26) extend through the insulator and conductor layers (24, 25). The conductor layer (25) is held at an electric potential negative with respect to the plasma.