Method of forming a metallic silicide.

摘要

A method of forming a metallic silicide (22) on silicon 10 or polysilicon (14) in which a masking layer such as silicon dioxide (12) is formed on a silicon slice and patterned to expose selected areas of the slice surface. The slice is then sputter etched followed by in situ deposition of a metal layer. The slice is heated to convert the portion of the metal layer in contact with the silicon (10) and/or polysilicon (14) to a metal silicide (22), then the non-converted metal is removed by a selective etchant. The siliciding may be performed in an ambient including nitrogen to prevent out-diffusion of silicon.