METHOD AND APPARATUS FOR CLEANING A SUBSTRATE SURFACE
摘要
<p>The present invention generally provides apparatus and method for forming a clean and damage free surface on a semiconductor substrate. One embodiment of the present invention provides a system that contains a cleaning chamber that is adapted to expose a surface of substrate to a plasma cleaning process prior to forming an epitaxial layer thereon. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the cleaning chamber by depositing a gettering material on the inner surfaces of the cleaning chamber prior to performing a cleaning process on a substrate. In one embodiment, oxidation and etching steps are repeatedly performed on a substrate in the cleaning chamber to expose or create a clean surface on a substrate that can then have an epitaxial placed thereon. In one embodiment, a low energy plasma is used during the cleaning step.</p>
申请公布号
WO2009014894(A1)
申请公布日期
2009.01.29
申请号
WO2008US69430
申请日期
2008.07.08
申请人
APPLIED MATERIALS, INC.;SANCHEZ, ERROL ANTONIO C.;SWENBERG, JOHANES;CARLSON, DAVID K.;DOHERTY, ROISIN L.
发明人
SANCHEZ, ERROL ANTONIO C.;SWENBERG, JOHANES;CARLSON, DAVID K.;DOHERTY, ROISIN L.