| 摘要 |
PURPOSE:To generate a signal changing from a ground potential to a potential being a power supply potential or over in a short time by controlling a potential of a substrate or a well so as to generate a potential being a power supply potential or over via a P channel MOS transistor (TR). CONSTITUTION:The drain and gate of a TRQ21 are connected to VCC and the source is connected to a node N21, the source of a TRQ22 is connected to the node N21, a signal phi21 is given to the gate, and the drain is connected to a node N22, and the drain of a TRQ23 is connected to the node N22, a signal phi22 is given to the gate and the source is grounded. A signal phi23 is given to the node N21 via a capacitor C21. The TRQ22 is a P-ch TR constituted in the N well, and since the well and the source are connected to a power supply via the N-ch TR, it is possible to increase the source or drain potential to a value being the VCC or over. Since a capacitor C21 is charged in advance, the time for charging is unnecessary and the TRQ22 acts like a triode, because the gate is at a ground potential and the drain and source are at the VCC or over in the generation of potential over the VCC. Then, a signal changing from a ground potential to a power supply voltage or over is outputted in a short time. |
