| 摘要 |
PURPOSE:To obtain an epitaxially grown film having high purity, and to improve the productivity of the film, by using a plurality of raw material jigs furnished with molten raw material tank and fit to the circumference of the crucible for crystal growth, introducing molten liquid successively into the crucible to form a plurality of epitaxial layers on the substrate, and exchanging the substrate having grown layers with a new substrate. CONSTITUTION:The molten liquid in the molten liquid tank 4 is transferred from the raw material jig 8 into the crucible 7 by turning the jig 8 until the slit of the jig is connected with the inlet port 13 of the crucible 7. After opening the shutter 12, the substrate 3 is lowered under rotation, immersed in the molten liquid to carry out the melt- back, and pulled up. The shutter 12 is closed, and then the jig 8 is closed after returning the molten liquid from the crucible 7 to the jig 8 by slowly lowering the the jig 8. Thereafter, the jig 8 is lifted and the different molten liquid in a different molten liquid tank 4 is applied to the substrate 3 in a similar matter. After the completion of the crystal growth, the substrate 3 is pulled up and removed together with the substrate holder 2 by the delivery device 18. A new substrate 3 held with the holder in the exchange chamber 15 is transferred by the transfer device 17 to the growth chamber 14 and attached to the vertically movable rotary shaft 1 by the delivery device 18, and the epitaxial growth is continued. |
