发明名称 X-RAY MASK
摘要 PURPOSE:To prevent the deformation of pattern on an X-ray mask by a method wherein a pattern type metal film with X-ray shielding faculty is formed on a quartz plate. CONSTITUTION:A multilayer film 12 (base Cr is approximately 500Angstrom in thickness and Au is 0.5-2mum in thickness) consisting of Cr-Au is formed in pattern type on the surface of a quartz plate 11 (approximately 0.5-7mm. in thickness when 6-inch square or round shape is formed. The X-ray exposing process is performed using said X-ray mask in such a manner that the high-power X-rays coming from a synchrotron and the like are made to irradiate from the surface reverse to the surface whereon the multilayer film 12 is formed. By the formation of the X-ray mask on the quartz plate, no deformation of pattern due to the thermal expantion and the deformation of a substrate are generated.
申请公布号 JPS59191331(A) 申请公布日期 1984.10.30
申请号 JP19830065950 申请日期 1983.04.14
申请人 SUWA SEIKOSHA KK 发明人 IWAMATSU SEIICHI
分类号 G03F1/00;G03F1/22;G03F1/68;H01L21/027;H01L21/30 主分类号 G03F1/00
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