发明名称 SCREENING METHOD OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To execute a nondestructive screening in a short time by erasing data while being changed up to a region in which all bits in a memory region are erased from a region sufficiently weaker than a rated value and discriminating acceptable or defective devices from the form of distribution of an obtained erasing rate when screening an erasable ROM. CONSTITUTION:Program voltage and program width are set previously under conditions sufficiently weaker than rated values in an initial input process at a step 1, and data are written under rated writing conditions are at a step 2. Data are erased under erasing conditions set at the step 1 in an erasing process at a step 3, and an erasing rate is obtained are recorded previously to a tape an an erasing-rate computing process at a step 4. The erasing of all bits is decided at a step 5, and either of said voltage or width is changed at a step 6 and data are returned to the step 2 on a non-erasing. The erasing rate is acquired at a step 7 on an erasing, and acceptable or defective devices are judged from the form of distribution of the erasing rate.
申请公布号 JPS59175737(A) 申请公布日期 1984.10.04
申请号 JP19830048957 申请日期 1983.03.25
申请人 HITACHI SEISAKUSHO KK 发明人 MATSUI KIYOSHI;YOSHIDA TOORU
分类号 H01L21/66;H01L21/8247;H01L29/788;H01L29/792 主分类号 H01L21/66
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