| 摘要 |
PURPOSE:In preparation of a luminescent element of semiconductor having plural layers with different functions such as emission range, light wave guide range, etc., to prepare the luminescent element of semiconductor by a simple process in high yield, by using liquid phase epitaxial growth. CONSTITUTION:The buffer layer 11 of InGaAsP and the InGaGsP layer 12 of the first semiconductor 12 to become a luminescent layer are uniformly subjected to liquid phase epitaxial growth on the n type InP substrate 9 having the diffraction grating 10. It is selectively etched with an unsaturated solution, and the InGaAsP layer 13 of the second semiconductor is similarly subjected to liquid phase epitaxial growth to become a light wave guide path layer. Finally, the top clad layer 14 of p type InP and the cap layer 15 of n type InGaAsP are grown, Zn is diffused in the part 16, and the electrodes 17 and 18 are attached to the substrate. A luminescent element of semiconductor can be prepared in a few processes in high yield. |
