MANUFACTURE OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To form ultrafine electrodes by an electrode material layer remaining without damage on the surface of a semiconductor substrate by insulating the electrode material layer part by an ion implantation. CONSTITUTION:A resist pattern 5(11) as an ion implanting pattern is formed on a polycrystalline silicon layer 4(10), an ion implantation is executed to remove and heat treat the pattern 5(11), the layer 4(10) part thus ion implanted is formed in an SiO2 film 6(12), and a capacitor electrode 7(transfer gate electrode 13) is formed of the remaining polycrystalline silicon layer not ion implanted. Since the surface of the substrate not exposed as by an RIE method to eliminate a damage, the characteristics of the element can be preferable.