发明名称 MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING DIODE
摘要 PURPOSE:To enable to provide a stable metal film for bonding leads with large bonding strength on an electrode of a window side by bonding a metal film on the surfaces of a reflection preventing film and a metal film for ohmically contacting, and removing the metal film for shielding the hole for emitting a light. CONSTITUTION:After an N type InP substrate 1 is polished and reduced in thickness, an N type side ohmic contact metal 8 is bonded, a light emitting hole 12 is then formed by photoresist, and an ohmic contact is then formed at the N type side by a heat treatment. In this case, alloying is produced to the substrate 1 by the heat treatment. Then, a nitrided silicon film is bonded to the hole 12 and the metal 8, a photoresist is used as a mask, the film is then patterned by an etchant of HF series, thereby forming a reflection preventing film 10. Subsequently, after a Cr film 13 for strengthening the bonding strength and a lead bonding metal 9 normally made of Au are bonded onto the film 10 and the metal 8, only the top of the hole 12 is etched, thereby removing the film 13 and the metal 9 of this parts.
申请公布号 JPS59165475(A) 申请公布日期 1984.09.18
申请号 JP19830039868 申请日期 1983.03.10
申请人 NIPPON DENKI KK 发明人 ISODA YOUICHI
分类号 H01L33/10;H01L33/14;H01L33/30;H01L33/40;H01L33/44 主分类号 H01L33/10
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