| 摘要 |
PURPOSE:To provide a vapor growth device which limits the flow of reactive gases only on the surface of a substrate and improves reaction efficiency and reduces gas consumption by separating the gases introduced through plural gas feed ports into a reaction chamber by the partition plates provided up to the parts above the substrate. CONSTITUTION:Upper and lower carrier gas feed ports 18, 19 connecting to carrier gas feed pipes 15, 16 are provided at one end of a reaction chamber 8 and a gaseous mixture feed port 21 connecting to a gaseous mixture feed port 20 is formed between the ports 18 and 19. A susceptor 22 on which a substrate 15 is placed is installed in the chamber 8 so as to face an IR lamp heater 12 across a transparent plate. A partition plate 23 is provided between the susceptor 22 and the ports 18, 19, 21 to separate and guide the gases introduced into the cahmber. A partition plate 24 is provided on the evacuation side as well to divide the waste gas to three layers which are conducted to an evacuating port 26. The mixing of the respective gaseous phases in the susceptor region 22 is thus suppressed and the independent control of only the gaseous layer over the substrate 15 is made possible. |
