| 摘要 |
PURPOSE:To obtain positive joining by previously coating the nose of a lead with Sn and previously forming an Au layer on an Al pad when the lead is projected up to an opening section formed to a carrier consisting of a flexible insulating film and the nose of the lead is fixed to the Al pad for a semiconductor element positioned under the opening section. CONSTITUTION:A copper foil lead 4 is bonded on a carrier 1 consisting of a polyimide film, etc. by using adhesives 9 while its nose is extended up to an opening section formed to the carrier, a projecting section 4a, width thereof is narrower than an Al pad formed to a semiconductor element and thickness thereof is thicker than 5mum, is formed to the lower surface of the nose, and the surface is coated previously with Sn. The upper section of the Al pad 6 surrounded by a passivation film 11 on the surface of the semiconductor element 5 opposite to the projecting section is coated previously with an Au layer 12 in thickness of 5-30mum. Accordingly, the projecting section 4a and the Au layer 12 are brought into contact, and melted and compression-bonded. |
