| 发明名称 |
SOS STRUCTURE AND METHOD OF FABRICATION |
| 摘要 |
A silicon-on-sapphire semiconductor structure, and method of fabricating such structure, in which a silicon nitride layer is provided over the oxide layer. The silicon nitride layer is disposed over the upper edge of the silicon island, and acts to prevent gate oxide breakdown. |
| 申请公布号 |
DE3068534(D1) |
申请公布日期 |
1984.08.16 |
| 申请号 |
DE19803068534 |
申请日期 |
1980.09.17 |
| 申请人 |
ROCKWELL INTERNATIONAL CORPORATION |
发明人 |
PEEL, JOHN LLOYD |
| 分类号 |
H01L29/78;H01L27/12;H01L29/417;H01L29/423;H01L29/49;H01L29/51;H01L29/786;(IPC1-7):H01L21/00;H01L21/86;H01L21/84 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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