| 摘要 |
PURPOSE:To make a dot shape excellent, by providing an electrode, which has an ohmic contact part at a position, which is separated from the end surface of a compound semiconductor having a plurality of light emitting parts aligned at the upper part of the end surface. CONSTITUTION:A compound semiconductor 1 is formed, e.g., by providing a P-type GaAlAs layer 12 and an N-type GaAlAs layer 13 on a P-type GaAs substrate 11 by a liquid phase epitaxial method. Light is allowed to emit only from one end surface 15 of the compound semiconductor 1. A plurality of light emitting parts 16 are aligned with a P-N junction 14 as a center. Since an insulating layer 3 is provided in the vicinity of the end surface 15 in an electrode 2, an ohmic contact part 21 is located at a position, which is separated from the end surface 15. A back surface electrode 14 is provided at the bottom surface of the compound semiconductor 1. Then the light is emitted from the approximately entire surface of the epitaxial layer as shown (b) different from the conventional distribution (a) in the Figure. |
