| 摘要 |
PURPOSE:To obtain easily a thin multi-element vapor deposited film having an excellent characteristic by placing plural pieces of different magnetron sputtering devices in the positions where the sputtering surfaces thereof face an object to be subjected to vapor deposition and irradiating continuously and simultaneously the plasma flow from each sputtering device to the object. CONSTITUTION:An object 10 to be subjected to vapor deposition is held adjustably in position by a bellows 20 in the holding part 14 of a vapor deposition vessel 12. Magnetron sputtering devices 18a, 18b are provided, via a shielding plate 32, and the respective sputtering surfaces 16a, 16b are directed toward the object 10. Electric power is supplied respectively independently to sputtering sources 24a, 24b, and plural lines of plasma flow are irradiated from sputtering targets 26a, 26b simultaneously without interruption toward the object 10 so that a thin multi-element vapor deposited film is formed on the object 10. The positions of the sputtering devices 18a, 18b are made adequately adjustable by means of bellows 28a, 28b. The compsn. structure in the film thickness direction is thus controlled satisfactorily. |
