| 摘要 |
PURPOSE:To enable to form a clean wafer having no short circuit on an Al pattern by a method wherein a dry etching is performed with the metal film formed surface of a substrate facing downward, and the part where the metal film is unnecessary is removed, thereby enabling to prevent the adhesion of dust on the wafer surface. CONSTITUTION:In a wafer holder 21, a quartz plate 22is arranged in the vicinity of the lid 21c, not in the vicinity of the bottom face 21a of the holder 21, the back side 23b of a wafer 23 is facing the lid 21c, and the wafer is placed in such a manner that its front side 23a is facing the bottom face 21a of the wafer holder 21. When an etching is to be performed, the same procedure as hithertofore is used, but the wafer holder 21 is arranged at the upper part of an auxiliary chamber 2 in such a manner that its left side face 21b comes in contact with a shutter 5, then the shutter 5 is opened, the quartz plate 22 is moved to an etching chamber 1 by operating the upper slide 6a, and then an etching is performed in the same manner as before. According to this process, as the surface 23a of the wafer 23 is always facing downward, the probability of adhesion of dust coming from above while the wafer is being shifted can be reduced to the minimum. |
