| 摘要 |
PURPOSE:To obtain the substrate for the silicon wafer, thermal expansion thereof is small and conductivity thereof is high, by using a substrate material, a thermal expansion coefficient and electric resistivity thereof take specific values. CONSTITUTION:The substrate for the silicon wafer consists of the substrate material, the thermal expansion coefficient thereof is 70X10<-7>/ deg.C or less and electric resistivity thereof 60X10<-6>OMEGAcm or less. Since the substrate is constituted by the substrate material, the thermal expansion coefficient thereof is small and electric resistance thereof is low, it has excellent conductivity, and cracks are not also generated in the silicon wafer on a bonding with the silicon wafer. |
