| 摘要 |
PURPOSE:To lower source resistance, and to keep drain dielectric resistance by partially stacking a gate pattern and a photo-resist for forming a high-concentration N type region and bringing them close to the drain side. CONSTITUTION:The photo-resist 3 is applied on a substrate 1, a hole is bored, and an impurity is implanted while using the photo-resist 3 as a mask to form the N type region 2. Multilayer insulating films, such as a PSG film 4, an SiN film 5 and a PSG film 6 are formed, and a T-shaped pattern is formed by the difference of etching. A photo-resist pattern 9 taking distances from a section on an insulating film, on which a gate is inverted, and a drain required for dielectric resistance is formed, and Si as the impurity is implanted while using the insulating film and the pattern 9 as masks to form a source region 7 and a drain region 8. Accordingly, a distance between a drain and the gate is separated and drain dielectric resistance can be increased. |
