| 摘要 |
<p>The method provides an improved semiconductor device having a semiconductor substrate (10) containing solid state signal processing circuitry which comprises doped regions of predetermined resistivity within the semiconductor substrate, a passivation layer (54) covering the surface of the semiconductor substrate with electrical contacts (12a) to the solid state signal processing circuitry exposed through the passivation layer. The improvement comprises forming, on the electrical contacts (12a) contact pads (36) which have an upper surface devoid of a depressed center region. After the forming step, an adhering insulator material (34) is deposited over the passivation layer (54), and a semiconductor wafer is mounted onto the substrate above the contact pads to form an assembly. The mounting process comprises applying pressure and heat to the assembly so that, prior to curing, adhering insulator material is squeezed out between the contact pads and a minimum thickness of adhering insulator material (34) remains between the substrate and the wafer, and so that the insulator material is cured. Portions of the wafer and adhering insulator material are then removed to expose the upper surface of predetermined contact pads. Predetermined regions of the remaining semiconductor wafer (36A) are then electrically interconnected with predetermined contact pads (38).</p> |
