| 摘要 |
PURPOSE:To aim at improvements in the element characteristic of a device formed on a semiconductor film, by shaping a beam form on a smaple so as to cause at least one spot to have a concave part outward, while making the kinetic direction of the smaple so as to be directed to the opening side of this concave part. CONSTITUTION:A cathode 1 is made up in forming a part of its cylindrical body into a door type notched at 90deg. to the center axis. The form of an electron beam being image-formed on a sample surface 10 is almost identical to the lower end face (radiating end face) of the cathode 1, meaning that a quarter of a circular image is notched into a door type one. This shaped beam is scanned in the opposite direction to an A direction so as to cause the sample surface 10 to relatively move toward the notch part outward (an arrow A direction). With this, the central part of a melting zone is solidified earlier than the outside part, and since the grain boundary produced out of the central part proceeds for both sides, a large crystal grain is secured and, what is better, a single crystal thin film is obtained so that the element characteristic of a semiconductor device can be improved. |
