| 摘要 |
PURPOSE:To obtain a wiring of high reliability by forming an intermetallic compound in uniform and sufficient thickness containing the side surface of an Al wiring, omitting an etching process and simplifying processes while eliminating problems caused by etching. CONSTITUTION:The Al wiring 3 in approximately 1mum thickness is formed on an Si substrate 1 with an SiO2 film 2, WF6+H2 are mixed into N2 gas, and W4 is applied selectively in the thickness of 300Angstrom . Most of W reacts with Al through treatment at 450 deg.C and an intermetallic compound layer is formed to the surface of the wiring 3, and the corrosion resistance and electromigration resistance of the wiring can be improved. Layer thickness coated hardly depend upon directions because of a CVD method, and the side surface of the wiring, particularly, only an Al surface, can also be coated with the metallic layer in uniform and sufficient thickness. Accordingly, a problem to be caused with the removal of a metal being not reacted can be avoided. |
