| 摘要 |
PURPOSE:To shorten the response time by reducing the resistance and capacitance between common terminals by a method wherein transistors which detect that the amount of accumulated charges amounts to a fixed value are connected in parallel between the common terminals. CONSTITUTION:The P-channel MOSFET's 10a-10e are provided on a P-type Si substrate 1 and connected in parallel between the common terminals 4a and 4b, and each gate is connected to N-layers of photo transistors 2a-2e. When conduction generates between the common terminals 4a and 4b, a processing circuit 8 emits a readout signal from a terminal 9. The potentials of the N-layers of the diodes 2a-2e gradually decrease in proportion to the amount of incident light: for example, when the potential of the diode 3c decreases to a fixed value, the FET10c has the decrease of a gate potential and then turns on, and a detected current flows because of the conduction between the common terminals 4a and 4c. The circuit 8 detects it and then gives the readout signal to a shift electrode 5 via the terminal 9. This constitution makes the detected current large, and enables to obtain a solid-state image sensor of a short response time. |
