发明名称 FORMING OF SOLOR ENERGY SELECTIVE ABSORPTION FILM BY VACUUM PLATING METHOD
摘要 PURPOSE:To improve a durability, reduce the difference of a selective absorption property due to the thickness of the film and widen the proper range of the thickness of the film comparatively by a method wherein a cermet film, consisting of the mixture of plating metal and the oxide of the metal, is formed on the surface of a material to be plated under an oxygen atmosphere or the mixed atmosphere of oxygen gas and an inert gas. CONSTITUTION:A metal, selected from a group consisting of tungsten, tantalum, molybdenum, niobium, zirconium, and hafnium, is employed for the plating metal, therefore, the cermet film, excellent in the heat-resisting property, is formed. The thickness of the cermet film is preferably 30-20nm. A transparent oxide film is formed by reactive deposit, reactive spattering, reactive ion plating or the like and is the film of an oxide selected from a group consisting of the oxide of the plating metal, aluminum oxide, silicon oxide, chrome oxide, nickel oxide, tin oxide, cobalt oxide and indium oxide while the thickness thereof is 100nm.
申请公布号 JPS5969658(A) 申请公布日期 1984.04.19
申请号 JP19820179528 申请日期 1982.10.12
申请人 SHIYOUWA ARUMINIUMU KK 发明人 MUROOKA SHIYUUICHI
分类号 F24J2/48 主分类号 F24J2/48
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