| 摘要 |
PURPOSE:To display the original excellent high-frequency characteristics of the closed gate type J-FET sufficiently by compensating a defect of which dielectric resistance between the gate and source of the FET is small and an application is narrow by structure in which a diode is connected in series with the source. CONSTITUTION:An n type layer 10 as the cathode region of the diode is grown on a p type semiconductor substrate 1, and the layer 10 is isolated insularly by a plurality of p type isolation regions. A plurality of p type gate regions 4 are diffused and formed in a channel region 7 in the layers 10 changed into insular shapes, a p-n junction 11 is generated among the layers 10 in which there is no channel region and the substrate 1, and cathode electrodes 16 are formed on the layers 10. According to the constitution, regions 3 on the anode sides of the diode are connected to the source regions 6 of the J-FET through the electrodes 16 extending on the regions 3, and an electrode 16a on the layer 10 as the cathode side of the diode is used as an apparent source electrode. |
