| 摘要 |
PURPOSE:To form a conductor layer with high purity and excellent crystalline condition by a deposition chamber composed economically by a method wherein a metal element is sputtered toward a substrate and deposited on the substrate in ionized or acivated hydrogen so that the material, composition and an exhaust system of the deposition chamber can be simplified. CONSTITUTION:While the temperature of a substrate 2 is kept at room temperature and a bell jar 1 is exhausted at the rate of 1,000l/min, hydrogen, activated by a hydrogen discharge tube 9 to which DC voltage of 600V is applied is introduced toward the substrate 2 to which DC voltage of -600V is applied at the current rate of 80ml/min. and Cr is heated and evaporated to form a Cr film of approximately 1,200Angstrom thickness. As the activated hydrogen is attracted by the substrate 2 with a negative potential effectively, the prevention effect against impurity contamination into the deposited film is completely enough. In the hydrogen discharge tube 9, hydrogen supplied through a gas inlet 21 generates a glow discharge in a discharge space by applying a voltage between one electrode member 22 and another electrode member 26 so that hydrogen is activated by electronic energy. |
