发明名称 MAGNETORESISTANCE EFFECT ELEMENT
摘要 PURPOSE:To make it possible to provide an MR sensor which can reproduce a short wavelength, by forming the small number of repetition of the unevenness of the surface of a ferromagnetic substrate, which forms a magnetoresistance effect film. CONSTITUTION:Uneven steps 12 are formed on a surface 14 of a ferromagnetic substrate 11 so as to form an angle 30-60 deg. with respect to a current, which is flowed to an MR film 13. The MR film 13 is evaporated on the surface 14, which is provided on the unevenness of the ferromagnetic substrate 11, and is conformal to the unevenness of the surface of the ferromagnetic substrate 11. Electrodes 15 are formed at both ends of the MR film 13. A constant current is supplied to the MR film 13. A shield film 17 is formed on the MR film 13 through an insulating layer 16. The shield film 17 is electrically insulated from the MR film 13 and the electrodes 15. The pitch of the unevenness of the surface is made to be 2mum or less. Thus the roughness of the etched surface is made small. The magnitude of an anisotropic magnetic field HK is controlled, and a part having good linearity of resistivity change DELTArho/rhoomicron ca be utilized.
申请公布号 JPS5941881(A) 申请公布日期 1984.03.08
申请号 JP19820153013 申请日期 1982.09.02
申请人 MATSUSHITA DENKI SANGYO KK 发明人 NOMURA NOBORU;KAMINAKA NOBUMASA;KANAI KENJI;KOMATA YUUJI
分类号 G11B5/39;H01L43/08 主分类号 G11B5/39
代理机构 代理人
主权项
地址