| 摘要 |
PURPOSE:To prevent etching breaking generated by plasma in the partition wall of a plasma generating section and in the vicinity of the microwave transmitting window of a gas introducing pipe and the leakage of air by setting up a film wall coated with an aluminum film to a section opposite to the microwave propagating section of the plasma generating section. CONSTITUTION:A decompression chamber decompressed up to fixed pressure of 1.0Torr is partitioned by a microwave shielding plate 22, and CF4 and O2 are introduced to the plasma generating section 23 side at fixed ratios. On the other hand, microwaves of 2.45GHz generated by the oscillation of a magnetron 25 are propagated in a wave guide 26 and transmit the partition wall 27, and induce plasma in the plasma generating section 23, and the active seeds of a plasma gas generated are introduced to an etching sectin 24, and etch polycrystalline silicon on a sample and a photo-resist film, etc. The etching of the surface of the partition wall 27 is prevented by using a quartz partition wall 27 in which the aluminum layer 28 consisting of not more than 1mum film thickness is formed to the surface 27a of the partition wall because the surface reacts with the radicals of the active particles and is etched. A section around the microwave transmitting window of the gas introducing pipe can also be coated. |
