| 摘要 |
PURPOSE:To produce a thin-film superlattice structure having high performance in stable and efficient manner, by mixing and dispersing a film forming material excited by glow discharge or the like in another material activated by light, under application of light. CONSTITUTION:After an active species producing chamber A and an exciting species production chamber D are evacuated, Si2HD6 and C3H6 are introduced into the active species producing chamber A and into the exciting species producing chamber D, respectively, through material gas supply tubes 7 and 12. Microwave discharge is caused by a discharge causing device 11 so that carbon exciting species are produced in the chamber D. High-energy light 8 is applied through a light transmitting plate 4 so that Si-H active species are produced in the chamber A. A gate valve 9 is then opened to allow the C exciting species to enter into the chamber A and to be dispersed therein. Photochemical reaction is thereby caused and an amorphous SiC:H film is deposited on a substrate 3. According to this method, since the surface of the substrate is not shocked by ions or the like during the process, uniform films without any disorder or defect on the surface can be produced stably and efficiently. |
