| 摘要 |
PURPOSE:To inhibit the formation of an intermediate reaction product and to carry out satisfactory epitaxial growth in an apparatus for growing a crystal of a compound in a vapor phase, by arranging holes for spouting gaseous starting materials for the compound above a susceptor. CONSTITUTION:Substrates 7, 71 are placed on a susceptor 2 and heated. A reaction chamber is divided into a plurality of subsidiary reaction chambers with partition plates 10, nozzles 9, 91-93 are installed in the chambers, and gaseous starting materials for a compound are spouted from the spouting holes 12 of the nozzles using a gas. The susceptor 2 is rotated to introduce the substrate 7 into each of the subsidiary reaction chambers. By this mechanism the mixing of the gaseous starting materials is inhibited until the materials reach the substrate for growth, so the formation of an undesirable intermediate reaction product is inhibited. Since the holes 12 extend to the upper part of the susceptor 2 in the apparatus, the gaseous starting materials are surely separated from one another, and an epitaxial layer of high crystal quality can be grown. |
