| 摘要 |
<p>PURPOSE:To reduce the power consumption of a high density storage device and make this device high-speed, by activating the first word line connected to a memory cell group through the second word line and a column selecting line. CONSTITUTION:A word line driving circuit LWD is operated in accordance with a column selecting signal, and the second word line 2WL or the like is activated. The first word lines 1WL0, 1WL1... corresponding to a relatively small number of memory cells Mco-Mci... are activated through switch means TR0, TR1... which are closed in accordance with the column selecting signal. Consequently, though unnecessary memory cells in a selected row are activated, the power consumption of a high density semiconductor storage device is reduced, and the device is made high-speed.</p> |
